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SGP15N60 SGW15N60
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
PG-TO-220-3-1
PG-TO-247-3
* Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C Ptot 139 W tSC 10 s VGE EAS 20 85 V mJ ICpuls Symbol VCE IC 31 15 62 62 Value 600 Unit V A VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150C 150C Marking G15N60 G15N60 Package PG-TO-220-3-1 PG-TO-247-3
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep 08
SGP15N60 SGW15N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.9 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =15A T j = 25C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =400 A,V C E =V G E V C E = 60 0 V,V G E = 0 V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 3 Typ. 2 2.3 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 5
Unit
V
A 40 2000 100 960 101 62 99 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0 V , V G E =20V V C E =20V, I C =15A V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =15A V G E =15V PG-TO-220-3-1 PG-TO-247-3-21 V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 Sep 08
SGP15N60 SGW15N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =15A, V G E = 0 /1 5 V, R G = 2 1 , L 1 ) =1 80nH , C 1 ) =2 50p F Energy losses include "tail" and diode reverse recovery. 32 23 234 46 0.30 0.27 0.57 38 28 281 55 0.36 0.35 0.71 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 40 0 V, I C =15A, L 1 ) =1 80nH, C 1 ) = 25 0p F V G E = 0 /1 5 V, R G = 2 1 Energy losses include "tail" and diode reverse recovery. 31 23 261 54 0.45 0.41 0.86 38 28 313 65 0.54 0.53 1.07 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.3 Sep 08
SGP15N60 SGW15N60
80A 70A 60A
100A
Ic
tp=5s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 10Hz TC=110C TC=80C
10A 50s
200s 1A 1ms
Ic
0.1A 1V 10V 100V
DC 1000V
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 21)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
35A
140W
30A
120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
POWER DISSIPATION
25A 20A 15A 10A 5A 0A 25C
Ptot,
50C
75C
100C
125C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
50A 45A 40A
50A 45A 40A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
35A 30A 25A 20A 15A 10A 5A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
35A 30A 25A 20A 15A 10A 5A
VGE=20V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
45A 40A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
50A
4.0V
3.5V
IC = 30A
IC, COLLECTOR CURRENT
35A 30A 25A 20A 15A 10A 5A 0A 0V 2V 4V 6V
3.0V
2.5V
IC = 15A
2.0V
1.5V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns tf td(on) tr 10ns 0
td(on) tr
10ns 5A
10A
15A
20A
25A
30A
20
40
60
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 2 1 , Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 15A, Dynamic test circuit in Figure E)
5.5V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
t, SWITCHING TIMES
100ns
tf tr td(on)
min.
10ns 0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 15A, RG = 21 , Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.4mA)
6
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
1.8mJ 1.6mJ
*) Eon and Ets include losses due to diode recovery.
1.4mJ
Ets*
1.2mJ
*) Eon and Ets include losses due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 0A Eon* Eoff
1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 0 Eoff Eon*
5A
10A
15A
20A
25A
30A
35A
20
40
60
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 2 1 , Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 15A, Dynamic test circuit in Figure E)
1.0mJ Ets*
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0.8mJ
0.1 0.05 0.02
0.6mJ Eon* 0.4mJ Eoff
10 K/W
-2
0.01
R,(1/W) 0.5321 0.2047 0.1304 0.0027
R1
, (s) 0.04968 -3 2.58*10 -4 2.54*10 -4 3.06*10
R2
0.2mJ
10 K/W single pulse
-3
C 1= 1/R 1
C 2= 2/R 2
0.0mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 15A, RG = 21 , Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
25V
1nF
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
120V
480V
C, CAPACITANCE
100pF
Coss
10V
5V
Crss
0V 0nC
25nC
50nC
75nC
100nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
250A
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
200A
15 s
150A
10 s
100A
5 s
50A
0 s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
PG-TO-220-3-1
9
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
10
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit =180nH Leakage inductance L a nd Stray capacity C =250pF.
11
Rev. 2.3
Sep 08
SGP15N60 SGW15N60
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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12
Rev. 2.3
Sep 08

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